Step-by-step capping and strain state of GaN/AlN quantum dots studied by grazing-incidence diffraction anomalous fine structure
Abstract
The investigation of small-size embedded nanostructures, by a combination of complementary anomalous diffraction techniques, is reported. GaN quantum dots (QD’s), grown by molecular beam epitaxy in a modified Stranski-Krastanow mode, are studied in terms of strain and local environment, as a function of the AlN cap layer thickness, by means of grazing-incidence anomalous diffraction. That is, the x-ray photon energy is tuned across the Ga absorption K edge which makes diffraction chemically selective. Measurement of hkl scans, close to the AlN (303¯0) Bragg reflection, at several energies across the GaK edge, allows the extraction of the Ga partial structure factor, from which the in-plane strain of GaN QD’s is deduced. From the fixed- Q energy-dependent diffracted intensity spectra, measured for diffraction-selected isostrain regions corresponding to the average in-plane strain state of the QD’s, quantitative information regarding the composition and out-of-plane strain has been obtained. We recover the in-plane and out-of-plane strains in the dots. The comparison to the biaxial elastic strain in a pseudomorphic layer indicates a tendency to an overstrained regime.
- Publication:
-
Physical Review B
- Pub Date:
- May 2006
- DOI:
- 10.1103/PhysRevB.73.205343
- arXiv:
- arXiv:cond-mat/0509016
- Bibcode:
- 2006PhRvB..73t5343C
- Keywords:
-
- 61.10.Nz;
- 61.10.Ht;
- 61.10.Eq;
- 61.46.-w;
- X-ray diffraction;
- X-ray absorption spectroscopy: EXAFS NEXAFS XANES etc.;
- X-ray scattering;
- Nanoscale materials;
- Condensed Matter - Materials Science
- E-Print:
- submitted to PRB