Atomically straight steps on vicinal Si(111) surfaces prepared by step-parallel current in the kink-up direction
Abstract
We demonstrate that annealing of a vicinal Si(111) surface at about 800°C with a direct current in the direction that ascends the kinks enhances the formation of atomically straight step edges over micrometer lengths, while annealing with a current in the opposite direction does not. Every straight step edge has the same atomic configuration U(2, 0), which is useful as a template for the formation of a variety of nanostructures. A phenomenological model based on electromigration of charged mobile atoms explains the observed current-polarity dependent behavior.
- Publication:
-
Applied Physics Letters
- Pub Date:
- July 2005
- DOI:
- arXiv:
- arXiv:cond-mat/0507232
- Bibcode:
- 2005ApPhL..87c1903Y
- Keywords:
-
- 68.47.Fg;
- 68.35.Bs;
- 68.35.Fx;
- 61.72.Cc;
- 66.30.Qa;
- Semiconductor surfaces;
- Structure of clean surfaces;
- Diffusion;
- interface formation;
- Kinetics of defect formation and annealing;
- Electromigration;
- Condensed Matter - Materials Science
- E-Print:
- Accepted for publication in Appl. Phys. Lett. Numbers of pages and figures are 12 and 4, respectively