Interacting Electrons in Disordered Wires: Anderson Localization and Low-T Transport
Abstract
We study the conductivity σ(T) of interacting electrons in a low-dimensional disordered system at low temperature T. For weak interactions, the weak-localization regime crosses over with lowering T into a dephasing-induced “power-law hopping.” As T is further decreased, the Anderson localization in Fock space crucially affects σ(T), inducing a transition at T=Tc, so that σ(T<Tc)=0. The critical behavior of σ(T) above Tc is lnσ(T)∝-(T-Tc)-1/2. The mechanism of transport in the critical regime is many-particle transitions between distant states in Fock space.
- Publication:
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Physical Review Letters
- Pub Date:
- November 2005
- DOI:
- arXiv:
- arXiv:cond-mat/0506411
- Bibcode:
- 2005PhRvL..95t6603G
- Keywords:
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- 72.20.-i;
- 71.30.+h;
- 72.15.Rn;
- 73.63.-b;
- Conductivity phenomena in semiconductors and insulators;
- Metal-insulator transitions and other electronic transitions;
- Localization effects;
- Electronic transport in nanoscale materials and structures;
- Condensed Matter - Disordered Systems and Neural Networks
- E-Print:
- 4+epsilon pages