Ab initio Calculation of the Intrinsic Spin Hall Effect in Semiconductors
Abstract
Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs, and AlAs is large [∼100(ℏ/e)(Ω cm)-1], showing the possibility of a spin Hall effect beyond the four-band Luttinger Hamiltonian. The calculated orbital-angular-momentum (orbital) Hall conductivity is one order of magnitude smaller, indicating no cancellation between the spin and orbital Hall effects in bulk semiconductors. Furthermore, it is found that the spin Hall effect can be strongly manipulated by strains, and that the ac spin Hall conductivity is large in pure as well as doped semiconductors.
- Publication:
-
Physical Review Letters
- Pub Date:
- June 2005
- DOI:
- 10.1103/PhysRevLett.94.226601
- arXiv:
- arXiv:cond-mat/0505146
- Bibcode:
- 2005PhRvL..94v6601G
- Keywords:
-
- 72.25.Dc;
- 71.20.-b;
- 72.20.-i;
- 85.75.-d;
- Spin polarized transport in semiconductors;
- Electron density of states and band structure of crystalline solids;
- Conductivity phenomena in semiconductors and insulators;
- Magnetoelectronics;
- spintronics: devices exploiting spin polarized transport or integrated magnetic fields;
- Condensed Matter - Materials Science;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- Phys. Rev. Lett. (accepted)