Exchange biasing of the ferromagnetic semiconductor (Ga,Mn)As by MnO (invited)
Abstract
We provide an overview of progress on the exchange biasing of a ferromagnetic semiconductor (Ga1-xMnxAs) by proximity to an antiferromagnetic oxide layer (MnO). We present a detailed characterization study of the antiferromagnetic layer using Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, transmission electron microscopy, and x-ray reflection. In addition, we describe the variation of the exchange and coercive fields with temperature and cooling field for multiple samples.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- May 2005
- DOI:
- 10.1063/1.1846033
- arXiv:
- arXiv:cond-mat/0505015
- Bibcode:
- 2005JAP....97jD304E
- Keywords:
-
- 75.50.Pp;
- 75.50.Dd;
- 75.50.Ee;
- 75.30.Et;
- 75.70.Cn;
- 75.60.Ej;
- 68.49.Uv;
- 79.20.Rf;
- 79.60.Jv;
- 79.60.Bm;
- 68.37.Lp;
- Magnetic semiconductors;
- Nonmetallic ferromagnetic materials;
- Antiferromagnetics;
- Exchange and superexchange interactions;
- Magnetic properties of interfaces;
- Magnetization curves hysteresis Barkhausen and related effects;
- X-ray standing waves;
- Atomic molecular and ion beam impact and interactions with surfaces;
- Interfaces;
- heterostructures;
- nanostructures;
- Clean metal semiconductor and insulator surfaces;
- Transmission electron microscopy;
- Condensed Matter - Materials Science
- E-Print:
- To appear in J. Appl. Phys. (invited paper in Proceedings of the 49th Annual Conference on Magnetism &