Dynamic avalanche breakdown of a p-n junction: Deterministic triggering of a plane streamer front
Abstract
We discuss the dynamic impact ionization breakdown of a high voltage p-n junction which occurs when the electric field is increased above the threshold of avalanche impact ionization on a time scale smaller than the inverse thermogeneration rate. The avalanche-to-streamer transition characterized by generation of dense electron-hole plasma capable of screening the applied external electric field occurs in such regimes. We argue that the experimentally observed deterministic triggering of the plane streamer front at the electric-field strength above the threshold of avalanche impact ionization, yet below the threshold of band-to-band tunneling, is generally caused by field-enhanced ionization of deep-level centers. We suggest that the process-induced sulfur centers and native defects such as EL2, HB2, and HB5 centers initiate the front in Si and GaAs structures, respectively. In deep-level-free structures the plane streamer front is triggered by Zener band-to-band tunneling.
- Publication:
-
Applied Physics Letters
- Pub Date:
- June 2005
- DOI:
- arXiv:
- arXiv:cond-mat/0504638
- Bibcode:
- 2005ApPhL..86x3504R
- Keywords:
-
- 72.20.Ht;
- 77.22.Jp;
- 73.40.Kp;
- 71.55.Eq;
- 71.55.Cn;
- High-field and nonlinear effects;
- Dielectric breakdown and space-charge effects;
- III-V semiconductor-to-semiconductor contacts p-n junctions and heterojunctions;
- III-V semiconductors;
- Elemental semiconductors;
- Condensed Matter - Materials Science
- E-Print:
- 4 pages, 2 figures