Nanoscale defect formation on InP (111) surfaces after MeV Sb implantation
Abstract
We have studied the surface modifications as well as the surface roughness of the InP(111) surfaces after 1.5 MeV Sb ion implantations. A scanning probe microscope has been utilized to investigate the ion-implanted InP(111) surfaces. We observe the formation of nanoscale defect structures on the InP surface. The density, height, and size of the nanostructures have been investigated here as a function of ion fluence. The rms surface roughness, of the ion implanted InP surfaces, has also been investigated. Raman-scattering results demonstrate that at the critical fluence, where the decrease in surface roughness occurs, the InP lattice becomes amorphous.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- January 2006
- DOI:
- arXiv:
- arXiv:cond-mat/0504584
- Bibcode:
- 2006JAP....99a4304P
- Keywords:
-
- 81.05.Ea;
- 81.05.Gc;
- 68.35.Bs;
- 61.72.Vv;
- 61.80.Jh;
- 78.30.Fs;
- III-V semiconductors;
- Amorphous semiconductors;
- Structure of clean surfaces;
- Doping and impurity implantation in III-V and II-VI semiconductors;
- Ion radiation effects;
- III-V and II-VI semiconductors;
- Condensed Matter - Materials Science
- E-Print:
- 18 pages, 9 figures