Ab-initio simulations on growth and interface properties of epitaxial oxides on silicon
Abstract
The replacement of SiO2 by so-called high-k oxides is one of the major challenges for the semiconductor industry to date. Based on electronic structure calculations and ab-initio molecular dynamics simulations, we are able to provide a consistent picture of the growth process of a class of epitaxial oxides around SrO and SrTiO3. The detailed understanding of the interfacial binding principles has also allowed us to propose a way to engineer the band-offsets between the oxide and the silicon substrate.
- Publication:
-
arXiv e-prints
- Pub Date:
- April 2005
- DOI:
- 10.48550/arXiv.cond-mat/0504256
- arXiv:
- arXiv:cond-mat/0504256
- Bibcode:
- 2005cond.mat..4256F
- Keywords:
-
- Condensed Matter - Materials Science
- E-Print:
- 6 pages, 6 figures, proceeding for the INFOS2005 conference (http://www.imec.be/infos/)