Coherent Population Trapping of Electron Spins in a High-Purity n-Type GaAs Semiconductor
Abstract
In high-purity n-type GaAs under a strong magnetic field, we are able to isolate a lambda system composed of two Zeeman states of neutral-donor-bound electrons and the lowest Zeeman state of bound excitons. When the two-photon detuning of this system is zero, we observe a pronounced dip in the excited-state photoluminescence, indicating the creation of the coherent population-trapped state. Our data are consistent with a steady-state three-level density-matrix model. The observation of coherent population trapping in GaAs indicates that this and similar semiconductor systems could be used for various electromagnetically induced transparency type experiments.
- Publication:
-
Physical Review Letters
- Pub Date:
- October 2005
- DOI:
- 10.1103/PhysRevLett.95.187405
- arXiv:
- arXiv:cond-mat/0504012
- Bibcode:
- 2005PhRvL..95r7405F
- Keywords:
-
- 78.55.Cr;
- 42.50.Gy;
- 71.35.-y;
- 78.67.-n;
- III-V semiconductors;
- Effects of atomic coherence on propagation absorption and amplification of light;
- electromagnetically induced transparency and absorption;
- Excitons and related phenomena;
- Optical properties of low-dimensional mesoscopic and nanoscale materials and structures;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Quantum Physics
- E-Print:
- 5 pages, 4 figures replaced 6/25/2007 with PRL version