Interlayer exchange coupling in (Ga,Mn)As-based superlattices
Abstract
The interlayer coupling between (Ga,Mn)As ferromagnetic layers in all-semiconductor superlattices is studied theoretically within a tight-binding model, which takes into account the crystal, band and magnetic structure of the constituent superlattice components. It is shown that the mechanism originally introduced to describe the spin correlations in antiferromagnetic EuTe/PbTe superlattices, explains the experimental results observed in ferromagnetic semiconductor structures, i.e., both the antiferromagnetic coupling between ferromagnetic layers in IV-VI ( EuS/PbS and EuS/YbSe ) superlattices as well as the ferromagnetic interlayer coupling in III-V [(Ga,Mn)As/GaAs] multilayer structures. The model also allows prediction of (Ga,Mn)As-based structures, in which an antiferromagnetic interlayer coupling could be expected.
- Publication:
-
Physical Review B
- Pub Date:
- May 2005
- DOI:
- 10.1103/PhysRevB.71.201303
- arXiv:
- arXiv:cond-mat/0502321
- Bibcode:
- 2005PhRvB..71t1303S
- Keywords:
-
- 75.50.Pp;
- 68.65.Cd;
- Magnetic semiconductors;
- Superlattices;
- Condensed Matter - Materials Science
- E-Print:
- 4 pages, 3 figures