Ultrafast bit addressing in a magnetic memory matrix
Abstract
An ultrafast bit addressing scheme for magnetic random access memories (MRAMs) in a crossed wire geometry is proposed. In the addressing scheme a word of cells is programmed simultaneously by subnanosecond field pulses making use of the magnetization precession of the free layer. Single-spin simulations of the free-layer dynamics show that the pulse parameters for programming an arbitrary word of the array can be chosen, such that the magnetization of the cells to be written performs either a half or a full precessional turn during application of the programming pulse depending on the initial and final magnetization orientations of the addressed cells. Such bit addressing scheme leads to a suppression of the magnetization ringing in all cells of the memory array, thereby allowing ultrahigh MRAM write clock rates above 1 GHz.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- August 2005
- DOI:
- 10.1063/1.1999030
- arXiv:
- arXiv:cond-mat/0502263
- Bibcode:
- 2005JAP....98c3910S
- Keywords:
-
- 85.70.Li;
- 84.30.Sk;
- 75.60.Ej;
- Other magnetic recording and storage devices;
- Pulse and digital circuits;
- Magnetization curves hysteresis Barkhausen and related effects;
- Condensed Matter - Materials Science
- E-Print:
- 30 pages, 6 figures, submitted to Journal of Applied Physics