Giant Electroresistance in Ferroelectric Tunnel Junctions
Abstract
The interplay between the electron transport in metal-ferroelectric-metal junctions with ultrathin ferroelectric barriers and the polarization state of a barrier is investigated. Using a model which takes into account screening of polarization charges in metallic electrodes and direct quantum tunneling across a ferroelectric barrier, we calculate the change in the tunneling conductance associated with the polarization switching. We find the conductance change of a few orders of magnitude for metallic electrodes with significantly different screening lengths. This giant electroresistance effect is the consequence of a different potential profile seen by transport electrons for the two opposite polarization orientations.
- Publication:
-
Physical Review Letters
- Pub Date:
- June 2005
- DOI:
- arXiv:
- arXiv:cond-mat/0502109
- Bibcode:
- 2005PhRvL..94x6802Z
- Keywords:
-
- 73.40.Gk;
- 77.80.Fm;
- 85.50.Gk;
- Tunneling;
- Switching phenomena;
- Non-volatile ferroelectric memories;
- Condensed Matter - Other Condensed Matter
- E-Print:
- 4 pages