Carbon-doped symmetric GaAs/AlGaAs quantum wells with hole mobilities beyond 106 cm2/V s
Abstract
Utilizing a carbon filament doping source, we prepared two-dimensional hole gases in a symmetric quantum-well structure in the GaAs/AlGaAs heterosystem. Low-temperature hole mobilities up to 1.2×106cm2/Vs at a density of 2.3×1011cm-2 were achieved on GaAs (001) substrates. In contrast to electron systems, the hole mobility sensitively depends on variations of the quantum-well width and the spacer thickness. In particular, an increase of the quantum-well width from an optimal value of 15 nm to 18 nm is accompanied by a 35% reduction of the hole mobility. The quality of ultrahigh-mobility electron systems is not affected by the employed carbon-doping source.
- Publication:
-
Applied Physics Letters
- Pub Date:
- June 2005
- DOI:
- 10.1063/1.1949292
- arXiv:
- arXiv:cond-mat/0501492
- Bibcode:
- 2005ApPhL..86y2105G
- Keywords:
-
- 81.07.St;
- 73.63.Hs;
- 73.40.Kp;
- 61.72.Vv;
- Quantum wells;
- III-V semiconductor-to-semiconductor contacts p-n junctions and heterojunctions;
- Doping and impurity implantation in III-V and II-VI semiconductors;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- doi:10.1063/1.1949292