Temperature and magnetization-dependent band-gap renormalization and optical many-body effects in diluted magnetic semiconductors

We calculate the Coulomb interaction induced density, temperature and magnetization-dependent many-body band-gap renormalization in a typical diluted magnetic semiconductor Ga_1-xMn_xAs in the optimally doped metallic regime as a function of carrier density and temperature. We find a large (∼0.1eV) band-gap renormalization which is enhanced by the ferromagnetic transition. We also calculate the impurity scattering effect on the gap narrowing. We suggest that the temperature, magnetization, and density dependent band-gap renormalization could be used as an experimental probe to determine the valence band or the impurity band nature of carrier ferromagnetism.