Measurements of the Density-Dependent Many-Body Electron Mass in Two Dimensional GaAs/AlGaAs Heterostructures
Abstract
We determine the density-dependent electron mass m* in two-dimensional electron systems of GaAs/AlGaAs heterostructures by performing detailed low-temperature Shubnikov deHaas measurements. Using very high-quality transistors with tunable electron densities we measure m* in single, high mobility specimens over a wide range of rs (6 to 0.8). Toward low densities we observe a rapid increase of m* by as much as 40%. For 2>rs>0.8 the mass values fall ∼10% below the band mass of GaAs. Numerical calculations are in qualitative agreement with our data but differ considerably in detail.
- Publication:
-
Physical Review Letters
- Pub Date:
- January 2005
- DOI:
- 10.1103/PhysRevLett.94.016405
- arXiv:
- arXiv:cond-mat/0412260
- Bibcode:
- 2005PhRvL..94a6405T
- Keywords:
-
- 71.18.+y;
- 73.40.-c;
- 73.43.Qt;
- Fermi surface: calculations and measurements;
- effective mass g factor;
- Electronic transport in interface structures;
- Magnetoresistance;
- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect
- E-Print:
- to be published in Physical Review Letters