Electronic states of Mn impurities and magnetic coupling between Mn spins in diluted magnetic semiconductors
Abstract
Electronic states of single Mn impurities and magnetic couplings between Mn spins in diluted magnetic semiconductors have been studied systematically. It has been clearly shown that in the ground state, Mn spin antiferromagnetically (AFM) couples to surrounding As(N) when p-d hybridization Vpd is large and both the hole level Ev and the impurity level Ed are close to the middle of the gap; or very weak ferromagnetically (FM) when Vpd is small and both Ev and Ed are deep in the valence band. The Mn spin couplings are Heisenberg AFM for half-filled hole orbits; on the contrary, the couplings between Mn spins are double-exchange-like FM when the hole occupation in the p orbits is away from half-filling, and this accounts for the FM order in III-V semiconductors. The important role of the antisite As(N) compensation or the hole phase separation for the stability of FM ground state in wide-gap diluted magnetic semiconductors is emphasized.
- Publication:
-
Physical Review B
- Pub Date:
- November 2005
- DOI:
- 10.1103/PhysRevB.72.195202
- arXiv:
- arXiv:cond-mat/0411598
- Bibcode:
- 2005PhRvB..72s5202W
- Keywords:
-
- 75.50.Pp;
- 75.10.-b;
- Magnetic semiconductors;
- General theory and models of magnetic ordering;
- Condensed Matter - Strongly Correlated Electrons;
- Condensed Matter - Materials Science
- E-Print:
- Phys. Rev. B 72, 195202 (2005)