High-frequency transport in p -type Si/ Si0.87 Ge0.13 heterostructures studied with surface acoustic waves in the quantum Hall regime

The interaction of surface acoustic waves (SAWs) with p -type Si/Si_0.87Ge_0.13 heterostructures has been studied for SAW frequencies of 30-300MHz . For temperatures in the range 0.7<T<1.6K and magnetic fields up to 7T , the SAW attenuation coefficient Γ and velocity change ΔV/V were found to oscillate with filling factor. Both the real σ₁ and imaginary σ₂ components of the high-frequency conductivity have been determined and compared with quasi-dc magnetoresistance measurements at temperatures down to 33mK . By analyzing the ratio of σ₁ to σ₂ , carrier localization can be followed as a function of temperature and magnetic field. At T=0.7K , the variations of Γ , ΔV/V , and σ₁ with SAW intensity have been studied and can be explained by heating of the two-dimensional hole gas by the SAW electric field. Energy relaxation is found to be dominated by acoustic phonon deformation potential scattering with weak screening.