Electron effective mobility in strained-Si/Si 1- xGe x MOS devices using Monte Carlo simulation
Abstract
Based on Monte Carlo simulation, we report the study of the inversion layer mobility in n-channel strained-Si/Si 1- xGe x MOS structures. The influence of the strain in the Si layer and of the doping level is studied. Universal mobility curves μeff as a function of the effective vertical field Eeff are obtained for various state of strain, as well as a fall-off of the mobility in weak inversion regime, which reproduces correctly the experimental trends. We also observe a mobility enhancement up to 120% for strained-Si/Si 0.70Ge 0.30, in accordance with best experimental data. The effect of the strained-Si channel thickness is also investigated: when decreasing the thickness, a mobility degradation is observed under low effective field only. The role of the different scattering mechanisms involved in the strained-Si/Si 1- xGe x MOS structures is explained. In addition, comparison with experimental results is discussed in terms of SiO 2/Si interface roughness, as well as surface roughness of the SiGe substrate on which strained-Si is grown.
- Publication:
-
Solid State Electronics
- Pub Date:
- August 2005
- DOI:
- 10.1016/j.sse.2005.06.013
- arXiv:
- arXiv:cond-mat/0411340
- Bibcode:
- 2005SSEle..49.1320A
- Keywords:
-
- Condensed Matter - Other Condensed Matter
- E-Print:
- 25 pages, 8 figures, 1 table, revised version, discussions and references added