Spin control in heteromagnetic nanostructures
Abstract
We suggest and verify experimentally a concept of heteromagnetic semiconductor structures. It is based on spin diffusion between layers of the nanostructure with different magnetic properties and allows to control the spin-switching rate for magnetic ions. A ten times increase of spin-lattice relaxation rate of magnetic Mn ions is achieved in Zn1-xMnxSe/Be1-yMnyTe heteromagnetic structures with an inhomogeneous distribution of Mn ions.
- Publication:
-
Applied Physics Letters
- Pub Date:
- April 2005
- DOI:
- 10.1063/1.1906322
- arXiv:
- arXiv:cond-mat/0411269
- Bibcode:
- 2005ApPhL..86p2104S
- Keywords:
-
- 75.50.Pp;
- 75.40.Gb;
- 75.50.Tt;
- 76.60.Es;
- 73.40.Lq;
- Magnetic semiconductors;
- Dynamic properties;
- Fine-particle systems;
- nanocrystalline materials;
- Relaxation effects;
- Other semiconductor-to-semiconductor contacts p-n junctions and heterojunctions;
- Condensed Matter - Materials Science
- E-Print:
- 8 pages, 4 figures