Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
Abstract
Thermoelectric power, electrical conductivity, and high field Hall effect were studied over a broad temperature range in ferromagnetic Ga(1-x)Mn(x)As epitaxial layers (0.015<x<0.06). Thermoelectric power analysis gives the information about carrier transport mechanisms in layers with both metallic and non-metallic type of conductivity and allows determination of the Fermi energy and carrier concentration. At high temperatures (T>70 K) the thermoelectric power in GaMnAs linearly increases with increasing temperature. That indicates the presence of a degenerate hole gas with the Fermi energy EF=220+-25 meV, nearly independent of Mn content (for 0.02<x<0.05). At lower temperatures GaMnAs layers with metallic-type conductivity show an additional contribution to the thermoelectric power with the maximum close to the Curie temperature. The layers exhibiting insulating electrical properties show 1/T-type increase of thermoelectric power at low temperatures.
- Publication:
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arXiv e-prints
- Pub Date:
- September 2004
- DOI:
- 10.48550/arXiv.cond-mat/0409659
- arXiv:
- arXiv:cond-mat/0409659
- Bibcode:
- 2004cond.mat..9659O
- Keywords:
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- Condensed Matter - Materials Science
- E-Print:
- 21 pages, 8 figures