Hole spin relaxation in semiconductor quantum dots
Abstract
Hole spin relaxation time due to the hole-acoustic-phonon scattering in GaAs quantum dots confined in quantum wells along (001) and (111) directions is studied after the exact diagonalization of Luttinger Hamiltonian. Different effects such as strain, magnetic field, quantum dot diameter, quantum well width, and the temperature on the spin relaxation time are investigated thoroughly. Many features that are quite different from the electron spin relaxation in quantum dots and quantum wells are presented with the underlying physics elaborated.
- Publication:
-
Physical Review B
- Pub Date:
- February 2005
- DOI:
- 10.1103/PhysRevB.71.075308
- arXiv:
- arXiv:cond-mat/0409249
- Bibcode:
- 2005PhRvB..71g5308L
- Keywords:
-
- 68.65.Hb;
- 63.22.+m;
- 63.20.Ls;
- 71.15.-m;
- Quantum dots;
- Phonons or vibrational states in low-dimensional structures and nanoscale materials;
- Phonon interactions with other quasiparticles;
- Methods of electronic structure calculations;
- Materials Science;
- Other
- E-Print:
- 10 pages, 10 figures