Modeling of Statistical Low-Frequency Noise of Deep-Submicrometer MOSFETs
Abstract
The low-frequency noise (LF-noise) of deep submicron MOSFETs is experimentally studied with special emphasis on yield relevant parameter scattering. A novel modeling approach is developed which includes detailed consideration of statistical effects. The model is based on device physics-based parameters which cause statistical fluctuations in LF-noise behavior of individual devices. It can easily be implemented in a compact model for use in circuit simulation tools.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- July 2005
- DOI:
- 10.1109/TED.2005.850955
- arXiv:
- arXiv:cond-mat/0409030
- Bibcode:
- 2005ITED...52.1576W
- Keywords:
-
- Condensed Matter - Other
- E-Print:
- 32 pages, 7 figures