Intersubband electronic Raman scattering in narrow GaAs single quantum wells dominated by single-particle excitations
Abstract
We measured resonant Raman scattering by intersubband electronic excitations in GaAs/AlAs single quantum wells (QWs) with well widths ranging from 8.5 to 18 nm. In narrow (less than ∼10nm ) QWs with sufficiently high electron concentrations, only single-particle excitations (SPEs) were observed in intersubband Raman scattering, which was confirmed by the well-width dependence of Raman spectra. We found characteristic variations in Raman shift and line shape for SPEs with incident photon energy in the narrow QWs.
- Publication:
-
Physical Review B
- Pub Date:
- October 2004
- DOI:
- 10.1103/PhysRevB.70.153305
- arXiv:
- arXiv:cond-mat/0406193
- Bibcode:
- 2004PhRvB..70o3305U
- Keywords:
-
- 78.67.De;
- 78.30.Fs;
- 73.21.Fg;
- Quantum wells;
- III-V and II-VI semiconductors;
- Condensed Matter - Other
- E-Print:
- 5 pages including 4 figures