Charge manipulation and imaging of the Mn acceptor state in GaAs by cross-sectional scanning tunneling microscopy
Abstract
An individual Mn acceptor in GaAs is mapped by cross-sectional scanning tunneling microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn 2+3d 5+hole) complex. We propose that the observed anisotropy of the Mn acceptor wavefunction is due to the d-wave present in the acceptor ground state.
- Publication:
-
Superlattices and Microstructures
- Pub Date:
- September 2003
- DOI:
- 10.1016/j.spmi.2004.03.055
- arXiv:
- arXiv:cond-mat/0406148
- Bibcode:
- 2003SuMi...34..539Y
- Keywords:
-
- Condensed Matter - Materials Science
- E-Print:
- Proceedings of the SIMD-4 conference. Hawaii, USA (December 1-5, 2003)
