Imaging Nanoscale Electronic Inhomogeneity in the Lightly Doped Mott Insulator Ca2-xNaxCuO2Cl2

The spatial variation of electronic states was imaged in the lightly doped Mott insulator Ca_2-xNa_xCuO₂Cl₂ using scanning tunneling microscopy or spectroscopy. We observed nanoscale domains with a high local density of states within an insulating background. The observed domains have a characteristic length scale of 2 nm (∼4 5a, a: lattice constant) with preferred orientations along the tetragonal [100] direction. We argue that such spatially inhomogeneous electronic states are inherent to slightly doped Mott insulators and play an important role for the insulator to metal transition.