Barrier formation at metal-organic interfaces: dipole formation and the charge neutrality level
Abstract
The barrier formation for metal-organic semiconductor interfaces is analyzed within the induced density of interface states (IDIS) model. Using weak chemisorption theory, we calculate the induced density of states in the organic energy gap and show that it is high enough to control the barrier formation. We calculate the charge neutrality levels of several organic molecules: 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA), 3,4,9,10-perylenetetracarboxylic bisbenzimidazole (PTCBI) and 4,4', N, N'-dicarbazolyl biphenyl (CBP) and the interface Fermi level for their contact with a Au (1 1 1) surface. We find an excellent agreement with the experimental evidence and conclude that the barrier formation is due to the charge transfer between the metal and the states induced in the organic energy gap.
- Publication:
-
Applied Surface Science
- Pub Date:
- July 2004
- DOI:
- 10.1016/j.apsusc.2004.05.084
- arXiv:
- arXiv:cond-mat/0405491
- Bibcode:
- 2004ApSS..234..107V
- Keywords:
-
- Condensed Matter - Materials Science
- E-Print:
- 7 pages, Proceedings of ICFSI-9, Madrid, Spain (September 2003), special issue of Applied Surface Science (in press)