Stable Fourfold Configurations for Small Vacancy Clusters in Silicon from ab initio Calculations
Abstract
Using density-functional-theory calculations, we have identified new stable configurations for tri-, tetra-, and pentavacancies in silicon. These new configurations consist of combinations of a ring hexavacancy with three, two, or one interstitial atoms, respectively, such that all atoms remain fourfold. As a result, their formation energies are lower by 0.6, 1.0, and 0.6eV, respectively, than the “part of a hexagonal ring” configurations, believed until now to be the lowest-energy states.
- Publication:
-
Physical Review Letters
- Pub Date:
- June 2004
- DOI:
- arXiv:
- arXiv:cond-mat/0405152
- Bibcode:
- 2004PhRvL..92y5504M
- Keywords:
-
- 61.72.Bb;
- 61.72.Ji;
- 71.55.Cn;
- 78.70.Bj;
- Theories and models of crystal defects;
- Point defects and defect clusters;
- Elemental semiconductors;
- Positron annihilation;
- Condensed Matter - Materials Science