Prediction of an Excitonic Ground State in InAs/InSb Quantum Dots
Abstract
Using atomistic pseudopotential and configuration-interaction many-body calculations, we predict an excitonic ground state in the InAs/InSb quantum-dot system. For large dots, the conduction band minimum of the InAs dot lies below the valence band maximum of the InSb matrix. Due to quantum confinement, at a critical size calculated here for various shapes, the gap Eg between InAs conduction states and InSb valence states vanishes. Strong electron-hole correlation effects are induced by the spatial proximity of the electron and hole wave functions, and by the lack of strong (exciton unbinding) screening, afforded by the existence of discrete 0D confined energy levels. These correlation effects overcome Eg, leading to the formation of a biexcitonic ground state (two electrons in InAs and two holes in InSb) being energetically more favorable (by ∼15 meV) than the dot without excitons.
- Publication:
-
Physical Review Letters
- Pub Date:
- January 2005
- DOI:
- 10.1103/PhysRevLett.94.016801
- arXiv:
- arXiv:cond-mat/0405128
- Bibcode:
- 2005PhRvL..94a6801H
- Keywords:
-
- 73.21.La;
- 71.35.Lk;
- 73.22.-f;
- Quantum dots;
- Collective effects;
- Electronic structure of nanoscale materials: clusters nanoparticles nanotubes and nanocrystals;
- Condensed Matter - Materials Science;
- Condensed Matter - Strongly Correlated Electrons