Conductance modulations in spin field-effect transistors under finite bias voltages
Abstract
The conductance modulations in spin field-effect transistors under finite bias voltages were studied. It was shown that when a finite bias voltage is applied between two terminals of a spin field-effect transistor, the spin precession states of injected spin-polarized electrons in the semiconductor channel of the device will depend not only on the gate-voltage controlled Rashba spin-orbit coupling but also on the bias voltage and, hence, the conductance modulation in the device due to Rashba spin-orbit coupling may also depend sensitively on the bias voltage.
- Publication:
-
Physical Review B
- Pub Date:
- April 2004
- DOI:
- 10.1103/PhysRevB.69.165304
- arXiv:
- arXiv:cond-mat/0403199
- Bibcode:
- 2004PhRvB..69p5304H
- Keywords:
-
- 73.40.Sx;
- 72.25.Hg;
- 71.70.Ej;
- 73.21.-b;
- Metal-semiconductor-metal structures;
- Electrical injection of spin polarized carriers;
- Spin-orbit coupling Zeeman and Stark splitting Jahn-Teller effect;
- Electron states and collective excitations in multilayers quantum wells mesoscopic and nanoscale systems;
- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect
- E-Print:
- 7 pages, 3 figures, to appear in Physical Review B, (April, 2004)