Electron-spin phase relaxation of phosphorus donors in nuclear-spin-enriched silicon
Abstract
We report a pulsed electron paramagnetic resonance study of the phase relaxation of electron spins bound to phosphorus donors in isotopically purified 29 Si and natural abundance Si ( Si ) single crystals measured at 8 K . The two-pulse echo decay curves for both samples show quadratic dependence on time, and the electron phase relaxation time TM for 29 Si is about an order of magnitude shorter than that for Si . The orientation dependence of TM demonstrates that the phase relaxation is caused by spectral diffusion due to flip-flops of the host nuclear spins. The electron spin echo envelope modulation effects in 29 Si are analyzed in the frequency domain.
- Publication:
-
Physical Review B
- Pub Date:
- July 2004
- DOI:
- 10.1103/PhysRevB.70.033204
- arXiv:
- arXiv:cond-mat/0402152
- Bibcode:
- 2004PhRvB..70c3204A
- Keywords:
-
- 76.30.-v;
- 03.67.Lx;
- 28.60.+s;
- 76.60.Lz;
- Electron paramagnetic resonance and relaxation;
- Quantum computation;
- Isotope separation and enrichment;
- Spin echoes;
- Condensed Matter - Materials Science;
- Quantum Physics
- E-Print:
- 5 pages, 3 figures