Electrical and structural properties of MgB2 films prepared by sequential deposition of B and Mg on the NbN-buffered Si(100) substrate
Abstract
We introduce a simple method of a MgB2 film preparation using a sequential electron-beam evaporation of B-Mg bilayer (followed by in-situ annealing) on the NbN-buffered Si(100) substrate. The transmission electron microscopy analyses confirm a growth of homogeneous nanogranular MgB2 films without the presence of crystalline MgO. A sensitive measurement of temperature dependence of microwave losses shows a presence of intergranular weak links close to the superconducting transition only. The MgB2 films obtained, about 200-nm thick, exhibit a maximum zero resistance critical temperature of 36K and a critical current density of 3×107A /cm2 at 13.2K.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- October 2004
- DOI:
- 10.1063/1.1794357
- arXiv:
- arXiv:cond-mat/0401569
- Bibcode:
- 2004JAP....96.4668C
- Keywords:
-
- 74.78.-w;
- 74.70.Ad;
- 68.55.Ac;
- 68.55.Jk;
- 74.25.Fy;
- 74.25.Sv;
- 81.15.Ef;
- 68.37.Lp;
- Superconducting films and low-dimensional structures;
- Metals;
- alloys and binary compounds;
- Nucleation and growth: microscopic aspects;
- Structure and morphology;
- thickness;
- crystalline orientation and texture;
- Transport properties;
- Critical currents;
- Vacuum deposition;
- Transmission electron microscopy;
- Condensed Matter - Superconductivity;
- Condensed Matter - Materials Science
- E-Print:
- 11 pages, 6 figures, submitted to Appl. Phys. Lett