Ab initio calculation of band-gap renormalization in highly excited GaAs
Abstract
We present ab initio quasiparticle self-energy calculations in crystalline GaAs for cases of intense electronic excitation (∼10% of valence electrons excited into conduction band), relevant for high-intensity ultrashort pulsed laser experiments. Calculations are performed using an out-of-equilibrium generalization of the GW approximation based on the Keldysh Green’s function approach. Our results indicate that while the quasiparticle band gap is a sensitive function of the amount of excitation, it is not possible to induce complete band-gap closure in this system by purely electronic means.
- Publication:
-
Physical Review B
- Pub Date:
- May 2004
- DOI:
- 10.1103/PhysRevB.69.205204
- arXiv:
- arXiv:cond-mat/0401407
- Bibcode:
- 2004PhRvB..69t5204S
- Keywords:
-
- 78.55.Cr;
- 71.15.Qe;
- 71.10.-w;
- 71.55.Eq;
- III-V semiconductors;
- Excited states: methodology;
- Theories and models of many-electron systems;
- Materials Science
- E-Print:
- 14 pages, 7 figures, submitted Phys. Rev. B