Bias-Dependent Generation and Quenching of Defects in Pentacene
Abstract
We describe a defect generation phenomenon that is new to organic semiconductors. A defect in pentacene single crystals can be created by bias-stress and persists at room temperature for an hour in the dark but only seconds with 420nm illumination. The defect gives rise to a hole trap at Ev+0.38 eV and causes metastable transport effects at room temperature. Creation and decay rates of the hole trap have a 0.67eV activation energy with a small (108 s-1) prefactor, suggesting that atomic motion plays a key role in the generation and quenching process.
- Publication:
-
Physical Review Letters
- Pub Date:
- August 2004
- DOI:
- 10.1103/PhysRevLett.93.076601
- arXiv:
- arXiv:cond-mat/0312721
- Bibcode:
- 2004PhRvL..93g6601L
- Keywords:
-
- 72.80.Le;
- 85.65.+h;
- Polymers;
- organic compounds;
- Molecular electronic devices;
- Condensed Matter - Materials Science;
- Condensed Matter - Soft Condensed Matter
- E-Print:
- 10 pages, 3 figures