First-principles envelope-function theory for lattice-matched semiconductor heterostructures

In this paper a multiband envelope-function Hamiltonian for lattice-matched semiconductor heterostructures is derived from first-principles self-consistent norm-conserving pseudopotentials. The theory is applicable to isovalent or heterovalent heterostructures with macroscopically neutral interfaces and no spontaneous bulk polarization. The key assumption—proved in earlier numerical studies—is that the heterostructure can be treated as a weak perturbation with respect to some periodic reference crystal, with the nonlinear response small in comparison to the linear response. Quadratic response theory is then used in conjunction with k•p perturbation theory to develop a multiband effective-mass Hamiltonian (for slowly varying envelope functions) in which all interface band-mixing effects are determined by the linear response. To within terms of the same order as the position dependence of the effective mass, the quadratic response contributes only a bulk band offset term and an interface dipole term, both of which are diagonal in the effective-mass Hamiltonian. The interface band mixing is therefore described by a set of bulklike parameters modulated by a structure factor that determines the distribution of atoms in the heterostructure. The same linear parameters determine the interface band-mixing Hamiltonian for slowly varying and (sufficiently large) abrupt heterostructures of arbitrary shape and orientation. Long-range multipole Coulomb fields arise in quantum wires or dots, but have no qualitative effect in two-dimensional systems beyond a dipole contribution to the band offsets. The method of invariants is used to determine the explicit form of the Hamiltonian for Γ₆ and Γ₈ states in semiconductors with the zinc-blende structure, and for intervalley mixing of Γ and X electrons in (001) GaAs/AlAs heterostructures.