Confinement effects and surface-induced charge carriers in Bi quantum wires
Abstract
We present measurements of Shubnikov-de Haas oscillations in arrays of bismuth nanowires. For 80 nm wires, the hole concentration is less than 30% that of bulk Bi, a finding that is consistent with current models of quantum confinement effects. However, 30-nm-diam nanowires which are predicted to be semiconductors show a nearly isotropic short period of 0.025 T-1, consistent with a heavy carrier concentration five times that of bulk Bi. These results are discussed in terms of surface-induced charge carriers in a spherical Fermi surface pocket that are uniformly distributed in the 30 nm nanowire volume and that inhibit the semimetal-to-semiconductor transition.
- Publication:
-
Applied Physics Letters
- Pub Date:
- February 2004
- DOI:
- 10.1063/1.1650038
- arXiv:
- arXiv:cond-mat/0311102
- Bibcode:
- 2004ApPhL..84.1326H
- Keywords:
-
- 73.21.Hb;
- 73.63.Nm;
- 72.20.Fr;
- 61.46.+w;
- 72.20.My;
- Quantum wires;
- Low-field transport and mobility;
- piezoresistance;
- Galvanomagnetic and other magnetotransport effects;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- 15 pages and 3 figures