New experimental evidence for the role of long-range potential fluctuations in the mechanism of 1/ f noise in a-Si:H
Abstract
We present measurements of 1/ f resistance noise in three different films of amorphous silicon (a-Si) in the presence of a transverse electric current. Two of these films have a nin sandwich structure-in one of them all three layers were hydrogenated; in the other one only the n-layers were hydrogenated, while the intrinsic layer was deuterated. The third film had pip structure with all three layers hydrogenated. The experimental spectra were found to be in a very good quantitative agreement with theoretical predictions, which were based on the mechanism involving long-range fluctuations of the Coulomb potential created by charged defects.
- Publication:
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Journal of Non Crystalline Solids
- Pub Date:
- June 2004
- DOI:
- 10.1016/j.jnoncrysol.2004.02.092
- arXiv:
- arXiv:cond-mat/0310468
- Bibcode:
- 2004JNCS..338..310B
- Keywords:
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- Condensed Matter - Disordered Systems and Neural Networks
- E-Print:
- 7 pages, 3 figures, to appear in J. Non-Cryst. Solids