STM characterization of the Si-P heterodimer
Abstract
We use scanning tunneling microscopy (STM) and Auger electron spectroscopy to study the behavior of adsorbed phosphine (PH3) on Si(001), as a function of annealing temperature, paying particular attention to the formation of the Si-P heterodimer. Dosing the Si(001) surface with ∼0.002 langmuirs of PH3 results in the adsorption of PHx (x=2,3) onto the surface and etching of Si to form individual Si ad-dimers. Annealing to 350 °C results in the incorporation of P into the surface layer to form Si-P heterodimers and the formation of short one-dimensional Si dimer chains and monohydrides. In filled state STM images, isolated Si-P heterodimers appear as zigzag features on the surface due to the static dimer buckling induced by the heterodimer. In the presence of a moderate coverage of monohydrides this static buckling is lifted, rending the Si-P heterodimers invisible in filled state images. However, we find that we can image the heterodimer at all H coverages using empty state imaging. The ability to identify single P atoms incorporated into Si(001) will be invaluable in the development of nanoscale electronic devices based on controlled atomic-scale doping of Si.
- Publication:
-
Physical Review B
- Pub Date:
- May 2004
- DOI:
- 10.1103/PhysRevB.69.195303
- arXiv:
- arXiv:cond-mat/0310297
- Bibcode:
- 2004PhRvB..69s5303C
- Keywords:
-
- 68.37.Ef;
- 68.35.-p;
- 68.43.Fg;
- 82.30.Hk;
- Scanning tunneling microscopy;
- Solid surfaces and solid-solid interfaces: Structure and energetics;
- Adsorbate structure;
- Chemical exchanges;
- Condensed Matter - Materials Science
- E-Print:
- 6 pages, 4 figures (only 72dpi)