A class of spin injection-precession ultrafast nanodevices
Abstract
Spin valve ultrafast spin injection devices with small dissipated power are described: an amplifier, a frequency multiplier, and a square-law detector. Their operation is based on injection of spin polarized electrons from one ferromagnet to another through a semiconductor layer and spin precession of the electrons in the semiconductor layer in a magnetic field induced by a (base) current in an adjacent nanowire. The base current can control the emitter current between the magnetic layers with frequencies up to several 100 GHz.
- Publication:
-
Applied Physics Letters
- Pub Date:
- March 2004
- DOI:
- 10.1063/1.1667002
- arXiv:
- arXiv:cond-mat/0310258
- Bibcode:
- 2004ApPhL..84.2118O
- Keywords:
-
- 72.25.Hg;
- 72.25.Mk;
- 85.35.Ds;
- 85.75.-d;
- 85.35.Kt;
- 75.50.Dd;
- 75.47.-m;
- 85.70.Kh;
- Electrical injection of spin polarized carriers;
- Spin transport through interfaces;
- Quantum interference devices;
- Magnetoelectronics;
- spintronics: devices exploiting spin polarized transport or integrated magnetic fields;
- Nanotube devices;
- Nonmetallic ferromagnetic materials;
- Magnetotransport phenomena;
- materials for magnetotransport;
- Magnetic thin film devices: magnetic heads;
- domain-motion devices etc.;
- Condensed Matter - Materials Science
- E-Print:
- 4 pages, 2 figures