Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well
Abstract
The small, about 30% magnetoresistance at the onset of full spin polarization in the 2D electron system in a modulation-doped Si/SiGe quantum well gives evidence that it is the remote doping that determines the transport scattering time. Measurements of the mobility in this strongly-interacting electron system with remote-doping scattering allow us to arrive at a conclusion that the Hubbard form underestimates the local field corrections by about a factor of 2.
- Publication:
-
Superlattices and Microstructures
- Pub Date:
- May 2003
- DOI:
- 10.1016/j.spmi.2004.02.003
- arXiv:
- arXiv:cond-mat/0310107
- Bibcode:
- 2003SuMi...33..271D
- Keywords:
-
- 73.43.-f;
- 72.20.-i;
- 72.20.Ee;
- Quantum Hall effects;
- Conductivity phenomena in semiconductors and insulators;
- Mobility edges;
- hopping transport;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- Superlattices Microstruct. 33, 271 (2003)
