Switching current versus magnetoresistance in magnetic multilayer nanopillars
Abstract
We study current-driven magnetization switching in nanofabricated magnetic trilayers, varying the magnetoresistance in three different ways. First, we insert a strongly spin-scattering layer between the magnetic trilayer and one of the electrodes, giving increased magnetoresistance. Second, we insert a spacer with a short spin-diffusion length between the magnetic layers, decreasing the magnetoresistance. Third, we vary the angle between layer magnetizations. In all cases, we find an approximately linear dependence between magnetoresistance and inverse switching current. We give a qualitative explanation for the observed behaviors, and suggest some ways in which the switching currents may be reduced.
- Publication:
-
Applied Physics Letters
- Pub Date:
- March 2004
- DOI:
- 10.1063/1.1651645
- arXiv:
- arXiv:cond-mat/0309191
- Bibcode:
- 2004ApPhL..84.1516U
- Keywords:
-
- 68.65.Ac;
- 75.60.Ej;
- 73.50.Jt;
- 72.15.Qm;
- 75.50.Bb;
- Multilayers;
- Magnetization curves hysteresis Barkhausen and related effects;
- Galvanomagnetic and other magnetotransport effects;
- Scattering mechanisms and Kondo effect;
- Fe and its alloys;
- Condensed Matter - Materials Science
- E-Print:
- 3 pages, 4 figures