Direct observation by resonant tunneling of the B+ level in a δ-doped silicon barrier

We observe a resonance in the conductance of silicon tunneling devices with a δ-doped barrier. The position of the resonance indicates that it arises from tunneling through the B⁺ state of the boron atoms of the δ layer. Since the emitter Fermi level in our devices is a field-independent reference energy, we are able to directly observe the diamagnetic shift of the B⁺ level. This is contrary to the situation in magneto-optical spectroscopy, where the shift is absorbed in the measured ionization energy.