Resonance Kondo tunneling through a double quantum dot at finite bias
Abstract
It is shown that the resonance Kondo tunneling through a double quantum dot (DQD) with even occupation and singlet ground state may arise at a strong bias, which compensates the energy of singlet/triplet excitation. Using the renormalization group technique we derive scaling equations and calculate the differential conductance as a function of an auxiliary dc bias for parallel DQD described by SO(4) symmetry. We analyze the decoherence effects associated with the triplet/singlet relaxation in DQD and discuss the shape of differential conductance line as a function of dc bias and temperature.
- Publication:
-
Physical Review B
- Pub Date:
- October 2003
- DOI:
- 10.1103/PhysRevB.68.155323
- arXiv:
- arXiv:cond-mat/0308619
- Bibcode:
- 2003PhRvB..68o5323K
- Keywords:
-
- 72.10.Fk;
- 05.10.Cc;
- 72.15.Qm;
- Scattering by point defects dislocations surfaces and other imperfections;
- Renormalization group methods;
- Scattering mechanisms and Kondo effect;
- Condensed Matter
- E-Print:
- 11 pages, 6 eps figures included