Very Large Magnetoresistance in Lateral Ferromagnetic (Ga,Mn)As Wires with Nanoconstrictions
Abstract
We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel magnetization. All samples exhibit a positive magnetoresistance, consistent with domain-wall trapping. For metallic samples, we find a magnetoresistance up to 8%, which can be understood from spin accumulation. In samples where, due to depletion at the constriction, a tunnel barrier is formed, we observe a magnetoresistance of up to 2000%.
- Publication:
-
Physical Review Letters
- Pub Date:
- November 2003
- DOI:
- 10.1103/PhysRevLett.91.216602
- arXiv:
- arXiv:cond-mat/0308385
- Bibcode:
- 2003PhRvL..91u6602R
- Keywords:
-
- 72.25.Dc;
- 73.40.Gk;
- 75.47.Jn;
- 75.50.Pp;
- Spin polarized transport in semiconductors;
- Tunneling;
- Ballistic magnetoresistance;
- Magnetic semiconductors;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 4 pages, 3 figures, submited to Phys. Rev. Lett