Sampling the diffusion paths of a neutral vacancy in silicon with quantum mechanical calculations
Abstract
We report a first-principles study of vacancy-induced self-diffusion in crystalline silicon. Starting from a fully relaxed configuration with a neutral vacancy, we proceed to search for local diffusion paths. The diffusion of the vacancy proceeds by hops to first nearest neighbor with an energy barrier of 0.40eV in agreement with experimental results. Competing mechanisms are identified, such as the reorientation, and the recombination of dangling bonds by Wooten-Winer-Weaire process.
- Publication:
-
Physical Review B
- Pub Date:
- November 2004
- DOI:
- 10.1103/PhysRevB.70.205202
- arXiv:
- arXiv:cond-mat/0308289
- Bibcode:
- 2004PhRvB..70t5202E
- Keywords:
-
- 61.72.Ji;
- 71.15.Mb;
- 71.15.Pd;
- 71.55.Cn;
- Point defects and defect clusters;
- Density functional theory local density approximation gradient and other corrections;
- Molecular dynamics calculations and other numerical simulations;
- Elemental semiconductors;
- Condensed Matter - Materials Science
- E-Print:
- 10 pages, 5 figures, accepted for publication in Pysical review B