Shallow-deep transitions of neutral and charged donor states in semiconductor quantum dots

We carry out a detailed study of neutral (D⁰) and charged (D^-) impurity states of hydrogen-like donors in spherical semiconductor quantum dots. The work is carried out within the effective mass theory, treating many-body effects within the local density approximation and the Harbola-Sahni schemes. We observe that the donor level undergoes shallow to deep transition as the dot radius is reduced. On further reduction of the dot radius it becomes shallow again. This suggests the possibility of carrier “freeze out” for both D⁰ and D^- . Further, our study of the optical gaps also reveals a nonmonotonic shallow-deep behavior.