Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy
Abstract
In order to fabricate precise atomic-scale devices in silicon using a combination of scanning tunneling microscopy (STM) to position dopant atoms and molecular beam epitaxy to encapsulate the dopants it is necessary to minimize the segregation/diffusion of dopant atoms during silicon encapsulation. We characterize the surface segregation/diffusion of phosphorus atoms from a δ-doped layer in silicon after encapsulation at 250°C and room temperature using secondary ion mass spectrometry (SIMS) and STM. We show that the surface phosphorus density can be reduced to a few percent of the initial δ-doped density if the phosphorus atoms are encapsulated with 5 monolayers of epitaxial silicon at room temperature. We highlight the limitations of SIMS to determine phosphorus segregation at the atomic scale and the advantage of using STM directly.
- Publication:
-
Applied Physics Letters
- Pub Date:
- August 2004
- DOI:
- 10.1063/1.1784881
- arXiv:
- arXiv:cond-mat/0307495
- Bibcode:
- 2004ApPhL..85.1359O
- Keywords:
-
- 81.05.Cy;
- 68.55.Ac;
- 68.35.Dv;
- 68.35.Fx;
- 81.15.Hi;
- 79.20.Rf;
- 68.37.Ef;
- Elemental semiconductors;
- Nucleation and growth: microscopic aspects;
- Composition segregation;
- defects and impurities;
- Diffusion;
- interface formation;
- Molecular atomic ion and chemical beam epitaxy;
- Atomic molecular and ion beam impact and interactions with surfaces;
- Scanning tunneling microscopy;
- Condensed Matter
- E-Print:
- doi:10.1063/1.1784881