Single-crystal organic field effect transistors with the hole mobility ∼8 cm2/V s
Abstract
We report on the fabrication and characterization of single-crystal organic p-type field-effect transistors (OFETs) with the field-effect mobility μ∼8 cm2/V s, substantially higher than that observed in thin-film OFETs. The single-crystal devices compare favorably with thin-film OFETs not only in this respect: the mobility for the single-crystal devices is nearly independent of the gate voltage and the field effect onset is very sharp. The subthreshold slope as small as S=0.85 V/decade has been observed for a gate insulator capacitance Ci=2±0.2 nF/cm2. This corresponds to the intrinsic subthreshold slope Si≡SCi at least one order of magnitude smaller than that for the best thin-film OFETs and amorphous hydrogenated silicon (α-Si:H) devices.
- Publication:
-
Applied Physics Letters
- Pub Date:
- October 2003
- DOI:
- 10.1063/1.1622799
- arXiv:
- arXiv:cond-mat/0306192
- Bibcode:
- 2003ApPhL..83.3504P
- Keywords:
-
- 85.30.Tv;
- 72.20.Fr;
- 72.20.Ee;
- 72.80.Le;
- Field effect devices;
- Low-field transport and mobility;
- piezoresistance;
- Mobility edges;
- hopping transport;
- Polymers;
- organic compounds;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- doi:10.1063/1.1622799