High Temperature Gate Control of Quantum Well Spin Memory
Abstract
Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a tenfold increase of the spin-relaxation rate as a function of applied electric field from 20 to 80 kV cm-1 at 170K and indicate a similar variation at 300K, in agreement with calculations based on the Rashba effect. Spin relaxation is almost field independent below 20 kV cm-1 reflecting quantum well interface asymmetry. The results indicate the achievability of a voltage-gateable spin-memory time longer than 3ns simultaneously with a high electron mobility.
- Publication:
-
Physical Review Letters
- Pub Date:
- December 2003
- DOI:
- arXiv:
- arXiv:cond-mat/0305396
- Bibcode:
- 2003PhRvL..91x6601K
- Keywords:
-
- 72.25.Fe;
- 72.25.Rb;
- 78.47.+p;
- Optical creation of spin polarized carriers;
- Spin relaxation and scattering;
- Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter;
- Condensed Matter
- E-Print:
- 4 pages, 4 EPS figures, REVTeX