Split-off dimer defects on the Si(001)2×1 surface
Abstract
Dimer vacancy (DV) defect complexes in the Si(001)2×1 surface are investigated using high-resolution scanning-tunneling microscopy and first-principles calculations. We find that under low-bias filled-state tunneling conditions, isolated “split-off” dimers in these defect complexes are imaged as pairs of protrusions, while the surrounding Si surface dimers appear as the usual “bean-shaped” protrusions. We attribute this to the formation of π-bonds between the two atoms of the split-off dimer and second-layer atoms, and present charge density plots to support this assignment. We observe a local brightness enhancement due to strain for different DV complexes and provide the first experimental confirmation of an earlier prediction that the 1+2-DV induces less surface strain than other DV complexes. Finally, we present a previously unreported triangular shaped split-off dimer defect complex that exists at SB-type step edges, and propose a structure for this defect involving a bound Si monomer.
- Publication:
-
Physical Review B
- Pub Date:
- February 2004
- DOI:
- 10.1103/PhysRevB.69.085312
- arXiv:
- arXiv:cond-mat/0305065
- Bibcode:
- 2004PhRvB..69h5312S
- Keywords:
-
- 68.37.Ef;
- 68.35.Gy;
- 73.20.At;
- Scanning tunneling microscopy;
- Mechanical properties;
- surface strains;
- Surface states band structure electron density of states;
- Condensed Matter - Materials Science
- E-Print:
- 8 pages, 7 figures, submitted to Phys. Rev. B