Growth and optical properties of GaN/AlN quantum wells
Abstract
We demonstrate the growth of GaN/AlN quantum-well structures by plasma-assisted molecular-beam epitaxy by taking advantage of the surfactant effect of Ga. The GaN/AlN quantum wells show photoluminescence emission with photon energies in the range between 4.2 and 2.3 eV for well widths between 0.7 and 2.6 nm, respectively. An internal electric field strength of 9.2±1.0 MV/cm is deduced from the dependence of the emission energy on the well width.
- Publication:
-
Applied Physics Letters
- Pub Date:
- June 2003
- DOI:
- 10.1063/1.1581386
- arXiv:
- arXiv:cond-mat/0304124
- Bibcode:
- 2003ApPhL..82.4154A
- Keywords:
-
- 81.15.Hi;
- 81.07.St;
- 78.67.De;
- 78.55.Cr;
- Molecular atomic ion and chemical beam epitaxy;
- Quantum wells;
- III-V semiconductors;
- Condensed Matter - Materials Science
- E-Print:
- Submitted to APL